? semiconductor components industries, llc, 2012 july, 2012 ? rev. 0 1 publication order number: mbraf1100t3/d MBRAF1100T3G schottky power rectifier surface mount power package schottky power rectifiers employ the use of the schottky barrier principle in a large area metal ? to ? silicon power diode. state ? of ? the ? art geometry features epitaxial construction with oxide passivation and metal overlay contact. ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. these state ? of ? the ? art devices have the following features: features ? rectangular package for automated handling ? highly stable oxide passivated junction ? high blocking voltage ? 100 v ? 150 c operating junction temperature ? guardring for stress protection ? this is a pb ? free device mechanical characteristics ? case: epoxy, molded ? weight: 95 mg (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead and mounting surface temperature for soldering purposes: 260 c max. for 10 seconds ? shipped in 12 mm tape and reel, 5000 units per reel ? cathode polarity band maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 100 v average rectified forward current t l = 130 c i f(av) 1.0 a non ? repetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 50 a operating junction temperature (note 1) t j ? 65 to +150 c voltage rate of change dv/dt 10 v/ns stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. the heat generated must be less than the thermal conductivity from junction ? to ? ambient: dp d /dt j < 1/r ja . sma ? fl case 403aa plastic style 6 schottky barrier rectifier 1.0 ampere 100 volts marking diagram ayww rad http://onsemi.com rad = device code a = assembly location y = year ww = work week = pb ? free package see detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ordering information
MBRAF1100T3G http://onsemi.com 2 thermal characteristics characteristic symbol value unit thermal resistance, junction ? to ? lead (note 2) thermal resistance, junction ? to ? ambient (note 2) r jl r ja 25 90 c/w 2. 1 inch square pad size (1 0.5 inch) for each lead on fr4 board. electrical characteristics rating symbol value unit maximum instantaneous forward voltage (note 4) (i f = 1.0 a, t j = 25 c) v f 0.75 v maximum instantaneous reverse current (note 4) (rated dc voltage, t j = 25 c) (rated dc voltage, t j = 100 c) i r 0.5 5.0 ma 3. 1 inch square pad size (1 0.5 inch) for each lead on fr4 board. 4. pulse test: pulse width = 300 s, duty cycle 2.0%. ordering information device marking package shipping ? MBRAF1100T3G rad sma ? fl (pb ? free) 5000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. typical electrical characteristics figure 1. typical forward voltage figure 2. typical reverse current* 20 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 v f , instantaneous voltage (volts) 100 c 25 c i , instantaneous forward current (amps) f 1 k 400 200 100 40 20 10 4 2 1 0.4 0.2 0.1 0.04 0.01 0.02 0 10 2030405060708090100 t j = 150 c 125 c 100 c v r , reverse voltage (volts) t j = 150 c i r , reverse current ( a) *the curves shown are typical for the highest voltage device in the voltage grouping. t ypical reverse current for lower voltage selections can be estimated from these curves if v r is sufficient below rated v r . 25 c figure 3. typical capacitance 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 0.1 0.2 0.5 1 2 5 10 20 50 100 v r , reverse voltage (volts) c, capacitance (pf) note: typical capacitance note: at 0 v = 270 pf
MBRAF1100T3G http://onsemi.com 3 0.001 0.01 0.1 1 10 100 0.0000001 0.000001 0.00001 0.0001 1000 0.001 0.01 0.1 1 10 100 figure 4. typical transient thermal response, junction ? to ? ambient t, pulse time (s) r (t) , typical transient thermal resistance ( c/w) 50% duty cycle 20% 10% 5% 2% 1% single pulse
MBRAF1100T3G http://onsemi.com 4 package dimensions sma ? fl case 403aa ? 01 issue o d e b l c solder footprint* dimensions: millimeters 5.56 1.76 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. 1.30 recommended notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. dim min max millimeters a 0.90 1.10 b 1.25 1.65 c 0.15 0.30 d 2.40 2.80 top view e1 bottom view 2x 2x side view a c seating plane e 4.80 5.40 e1 4.00 4.60 l 0.70 1.10 on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 mbraf1100t3/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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